Welcome to the Microelectronics and MEMS Laboratory, IIT Madras
 

 

Name: Dr. Amitava DasGupta
Designation:Professor
Address:ESB - 208C
:Department of Electrical Engineering
:Indian Institute of Technology,  Madras.
Phone:OFF:  2257  4416
:Res:   2257   6416    2257   4402
Fax:+91-44-2257 4402
Email:adg [AT] ee.iitm.ac.in

 

   Dr.Amitava DasGupta received the B.E. degree in Electronics and Telecommunication Engineering from Jadavpur University,Kolkata, India in 1982, M.Tech degree in Electrical Engineering from I.I.T. Madras in 1984 and Ph.D from I.I.T. Kharagpur in 1988. His Ph.D dissertation was on analytical modeling of small geometry MOSFETs with non-uniformly doped channels. He joined as a Lecturer in I.I.T. Kharagpur in the same year. He has been a Faculty member in the Department of Electrical Engineering, I.I.T. Madras since 1993 and is currently a Professor. As a DAAD Fellow, he worked at the Institut für Hochfrequenztechnik, Darmstadt, Germany during 1991-92 and again in 1997. His research interests are in the areas of Semiconductor Device Modeling and Technology and as well as MEMS. He has supervised 25 research scholars for their M.S. (by research) / Ph.D degrees. He has more than 150 research publications in International Journals and Proceedings of International Conferences and has Co-authored a book on Semiconductor Devices – Modeling & Technology.He is an Editor of the IETE Technical Review and ISSS Journal of Micro and Smart Systems.He is a Fellow of Indian National Academy of Engineering (INAE).

Recent Publications

  1.   Udit Rawat,Dr. Deleep R. Nair and Dr.Amitava DasGupta, "Piezoelectric-on-Silicon Array Resonators with Asymmetric Phononic Crystal Tethering", IEEE Journal of Microelectromechanical Systems (JMEMS), accepted.

  2.   Shelly Agarwal, Braineard Eladi Paul, Amitava DasGupta and Dhiman Chatterjee, "Experimental characterization of piezoelectrically actuated silicon micromachined valveless micropump", Microfluidics and Nanofluidics, 21: 2. DOI:10.1007/s10404-016-1837-8, January 2017.

  3.   Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs", IEEE Trans. Electron Devices, vol. 63, no.12, pp. 4693-4701, Dec. 2016.

  4.   Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "A Compact Model of Drain Current for GaN HEMTs based on 2DEG Charge Linearization", IEEE Trans. Electron Devices, vol. 63, no.11, pp. 4226-4232, Nov. 2016.

  5.   Nikhil K. S. , Nandita DasGupta, Amitava DasGupta and Anjan Chakravorty, "Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors", IEEE Trans. Electron Devices, vol. 63, no. 10, pp. 4003-4010, Oct. 2016.

  6.   Sarath Gopalakrishnan, Amitava DasGupta and Deleep R. Nair, "Study of the Effect of Surface Roughness on the Performance of RF MEMS capacitive switches through 3-dimensional geometric modeling", IEEE Journal of the Electron Devices Society, vol. 4, no. 6, pp. 451-458, 2016

  7.   Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs", IEEE Trans. Electron Devices, vol. 63, no.4, pp. 1450-1458, April 2016.

  8.   Sreenidhi Turuvekere, Amitava DasGupta and Nandita DasGupta, "Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs", IEEE Trans. Electron Devices, vol. 62, no. 10. pp. 3449-3452, Oct. 2015.

  9. Nitin Prasad, Prasad Sarangapani, Nikhil K. S., Nandita DasGupta,  Amitava DasGupta, and Anjan Chakravorty “An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors”, IEEE Trans. Electron Devices, vol.62, no.3, pp. 919-926, March 2015.

  10. Sreenidhi Turuvekere, Dipendra Singh Rawal,  Amitava DasGupta, and Nandita DasGupta, “Evidence of Fowler Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature”, IEEE Trans. Electron Devices, vol. 61, no. 12. pp. 4291-4294, Dec. 2014.

  11. Gourab Dutta, Sreenidhi Turuvekere, Naveen Karumuri, Nandita DasGupta, and  Amitava DasGupta, “ Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT”, IEEE Electron Device Letters, vol. 35, no. 11. pp. 1085-1087, Nov. 2014.

  12. K. Naveen, T. Sreenidhi, Nandita DasGupta and  Amitava DasGupta, “ A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs valid for all Bias Voltages”, IEEE Trans. Electron Devices, vol. 61, no,7. pp. 2343-2349, July 2014.

  13. T. Sreenidhi, K. Naveen, A. Azizur Rahman, Arnab Bhattacharya,  Amitava DasGupta, and Nandita DasGupta, “ Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling”, IEEE Trans. Electron Devices, vol. 60, no,10. pp. 3157 - 3165, Oct. 2013.

  14. D.S. Rawal, B.K. Sehgal, R. Muralidharan, H.K. Malik   and Amitava DasGupta, “Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching”, Vacuum, Vol. 86, Issue 12, pp. 1844-1849, July 2012.

  15. Paul E. Braineard, Dhiman Chatterjee   and Amitava DasGupta, “An efficient numerical method for predicting the performance of valveless micropump ”, Smart Materials and Structures, vol. 21 (Article No. 115012), Nov. 2012.

  16. G S Jayadeva   and Amitava DasGupta, “Quantum Mechanical Effects in Bulk MOSFETS from a Compact Modeling Perspective-A Review”, IETE Technical Review, vol. 29, no.1, pp. 3-28, Jan-Feb. 2012.

  17. Jaibir Sharma, Nagendra Krishnapura   and Amitava DasGupta, “Fabrication of low pull-in voltage RF MEMS switches on glass substrate in recessed CPW configuration for V-band application”, Journal of Micromech. and Microengg, vol.22, (Article No. 025001), 2012.

  18. Ujwal Radhakrishna, Nandita DasGupta,Amitava DasGupta,   and Anjan Chakravorty, “Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback and Self-Heating”, IEEE Trans. Electron Devices, vol. 58, pp. 4035-4041, November 2011.

  19. G S Jayadeva  and Amitava DasGupta, “Analytical Approximation for the Surface Potential in n-channel MOSFETs considering Quantum Mechanical Effects”, IEEE Trans. Electron Devices, pp. 1820-1828, August 2010.

  20. J. Jacob, Amitava DasGupta, M. Schröter and Anjan Chakravorty, “Modeling Non-Quasi-Static Effects in SiGe HBTs”,IEEE Trans. Electron Devices, pp. 1559-1566, July 2010.

  21. Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, “Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model”, IEEE Trans. On Device and Materials Reliability, pp. 247-253, June 2010.

  22. Jaibir Sharma and Amitava DasGupta, “Effect of stress on the pull-in voltage of membranes for MEMS application”, Journal of Micromech. and Microengg., vol. 19, issue 11, (Article No. 115021), Nov. 2009.

  23. Binsu J Kailath, Amitava DasGupta, Nandita DasGupta, B N Singh and L M Kukreja, “Growth of Ultra-thin SiO2 by Laser Induced Oxidation”, Semiconductor Science & Technology, Vol.24, Issue 10, (Article No. 105011), Oct. 2009.

  24. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique”, Electronics Letters, Vol. 45, no. 10, pp. 527-528, May 7, 2009.

  25. Jaibir Sharma and Amitava DasGupta, “Fabrication of reliable RF MEMS switches in CPW configuration”, Advanced Materials Research, Vol. 74, pp 259-263, 2009.

  26. G.S. Jayadeva and Amitava DasGupta, “Compact model of short channel MOSFETs considering quantum mechanical effects”, Solid State Electronics, vol.3, pp.649-657, June 2009.

  27. Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta and Amitava DasGupta, “Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs”, Solid State Electronics, Vol.53, pp.256-265, March 2009.

  28. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma”, Semiconductor Scientific Technology., Vol.23, Issue 12, (Article No. 125019), Dec. 2008.

  29. Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta, “Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs”, IEEE Trans. Electron Devices , pp. 3442-3449, December 2008.

  30. Jaibir Sharma and Amitava DasGupta,“A low temperature wet release process for low stiffness structures”, Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043007-1-5, October-December 2008.

  31. Jaibir Sharma and Amitava DasGupta, “Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams”, Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043020-1-6, October-December 2008.

  32. Binsu J Kailath, Amitava DasGupta, and Nandita DasGupta “Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions”, IEEE Trans. On Device and Materials Reliability, vol.7, no.4, pp. 602-610, Dec. 2007

  33. B. Bindu, Nandita DasGupta and Amitava DasGupta, “A unified model for gate-capacitance voltage characteristics and extraction of parameters of Si/SiGe heterostructure PMOSFETs”, IEEE Trans. Electron Devices, vol. 54, pp. 1889 - 1896, August 2007.

  34. Binsu J. Kailath, Amitava DasGupta and Nandita DasGupta, “Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide”, Solid State Electronics, Vol.51, pp.762-770, May 2007.

  35. K.N.Bhat, Amitava DasGupta, P.R.S.Rao, N.DasGupta, E.Bhattacharya, K.Sivakumar, V.Vinoth Kumar, L.Helen Anitha, J.D.Joseph, S.P.Madhavi, and K.Natarajan "Wafer Bonding -A Powerful Technique for MEMS", Indian Journal of Pure and Applied Physics, vol.45, no.4, pp. 311-316, April 2007.

     

     copyrights ©   2017  ®   reserved.     Prof. Dr. Amitava DasGupta              MEMS                                                 EE                    IITM